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XP152A12C0MR-12 PDF预览

XP152A12C0MR-12

更新时间: 2024-09-19 12:56:31
品牌 Logo 应用领域
特瑞仕 - TOREX /
页数 文件大小 规格书
5页 428K
描述
Power MOSFET

XP152A12C0MR-12 数据手册

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XP152A12C0MR  
ETR1121_001  
Power MOSFET  
GENERAL DESCRIPTION  
The XP152A12C0MR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.  
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.  
In order to counter static, a gate protect diode is built-in.  
The small SOT-23 package makes high density mounting possible.  
FEATURES  
APPLICATIONS  
Notebook PCs  
Low On-State Resistance : Rds(on) = 0.3  
Ω
Ω
@ Vgs = -4.5V  
@ Vgs = -2.5V  
:
Rds(on) = 0.5  
Cellular and portable phones  
On-board power supplies  
Li-ion battery systems  
Ultra High-Speed Switching  
Gate Protect Diode Built-in  
Driving Voltage  
: -2.5V  
P-Channel Power MOSFET  
DMOS Structure  
Small Package  
: SOT-23  
PIN CONFIGURATION  
PIN ASSIGNMENT  
PIN NUMBER  
PIN NAME  
FUNCTION  
Gate  
1
2
3
G
S
D
Source  
Drain  
ABSOLUTE MAXIMUM RATINGS  
EQUIVALENT CIRCUIT  
Ta = 25  
PARAMETER  
SYMBOL RATINGS UNITS  
Drain - Source Voltage  
Gate - Source Voltage  
Drain Current (DC)  
Drain Current (Pulse)  
Reverse Drain Current  
Vdss  
Vgss  
Id  
-20  
±12  
-0.7  
V
V
A
Idp  
Idr  
-2.8  
A
-0.7  
A
Channel Power Dissipation *  
Channel Temperature  
Pd  
0.5  
W
Tch  
150  
Storage Temperature Range Tstg  
-55~150  
* When implemented on a ceramic PCB  
1/5  

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