Datasheet > XP161

XP161

更新时间： 2024-09-19 07:56:51

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描述
N-Channel Power MOSFET

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中文翻译

获取价格

数据手册

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XP161 数据手册

SMD Type

MOSFET

N-Channel Power MOSFET

XP161

SOT-89

Unit: mm

■ Features

+0.1

4.50_-0.1

1.50_-0.1

+0.1

● Low on-state resistance : Rds (on) = 0.055Ω ( Vgs = 4.5V )

1.80_-0.1

Rds (on) = 0.095Ω ( Vgs = 2.5V )

Rds (on) = 0.20Ω ( Vgs = 1.5V )

● Ultra high-speed switching

+0.1

0.48_-0.1

0.53_-0.1

0.44_-0.1

●

Gate protect diode built-in

● Driving Voltage : 1.5V

1 Gate

1. Base

1. Source

+0.1

3.00_-0.1

2 Drain

2. Collector

2. Drain

3 Source

3. Emiitter

3. Gate

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain to source voltage

Gate to source voltage

Drain current (DC)

Symbol

VDSS

VGSS

Rating

Unit

±8

Drain current(pulse)

IDP

Power dissipation

℃

Channel temperature

Tch

150

Storage temperature

Tstg

-55 to +150

* When implemented on a ceramic PCB

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Testconditons

VDS=20V,VGS=0

VGS=±8V,VDS=0

Min

0.5

Typ Max

Unit

Drain cut-off current

IDSS

IGSS

μA

Gate leakage current

±10 μA

Gate to source cutoff voltage

Forward transfer admittance

VGS(off) VDS=10V,ID=1mA

1.2

VDS=10V,ID=2A

VGS=4.5V,ID=2A

VGS=2.5V,ID=2A

VGS=1.5V,ID=0.5A

│Yfs│

0.042 0.055

Drain to source on-state resistance

RDS(on)

0.070 0.095

0.12 0.20

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Ciss

Coss

Crss

td(on)

390

210

VDS=10V,VGS=0,f=1MHZ

ID=2A,VGS(on)=5V,VDD=10V

Turn-off delay time

Fall time

td(off)

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