Power MOS FET
XP161A11A1PR
ꢀ Applications
ꢀꢀN-Channel Power MOS FET
ꢀꢀDMOS Structure
ꢀꢀLow On-State Resistance: 0.105Ω MAX
ꢀꢀGate Protect Diode Built-in
ꢀꢀUltra High-Speed Switching
ꢀꢀSOT-89 Package
ꢀꢀNotebook PCs
ꢀꢀCellular and portable phones
ꢀꢀOn-board power supplies
ꢀꢀLi-ion battery systems
ꢀ General Description
The XP161A11A1PR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
ꢀ Features
Low on-state resistance: Rds(on)=0.065Ω(Vgs=10V)
Rds(on)=0.105Ω(Vgs=4.5V)
Ultra high-speed switching
Gate Protect Diode Built-in
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
Operational Voltage: 4.5V
High density mounting: SOT-89
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ꢀ Pin Configuration
ꢀ Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
2
3
G
D
S
Gate
Drain
Source
1
2
3
G
D
S
SOT-89
(TOP VIEW)
ꢀ Absolute Maximum Ratings
ꢀ Equivalent Circuit
Ta=25
:
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Vdss
Vgss
Id
30
±20
4
V
V
A
A
A
Drain Current (Pulse)
Reverse Drain Current
Idp
16
4
Idr
1
2
3
Continuous Channel
Pd
2
W
Power Dissipation (note)
N-Channel MOS FET
(1 device built-in)
Channel Temperature
Storage Temperature
Tch
150
:
:
Tstg
-55~150
Note: When implemented on a ceramic PCB
490