Datasheet > XP162A12A6PR_1

XP162A12A6PR_1

更新时间： 2024-11-08 03:13:59

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
5页	434K
描述
Power MOSFET

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中文翻译

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数据手册

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XP162A12A6PR_1 数据手册

XP162A12A6PR

ETR1126_001

Power MOSFET

■GENERAL DESCRIPTION

The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

The small SOT-89 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance

Rds(on) = 0.17

Rds(on) = 0.3

@ Vgs = -4.5V

@ Vgs = -2.5V

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Ultra High-Speed Switching

Dribing Voltage

: -2.5V

Gate Protect Diode Built-in

P-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-89

■PIN CONFIGURATION

■EQUIVALENT CIRCUIT

■PIN ASSIGNMENT

FUNCTION

NUMBER

NAME

Gate

Drain

Source

■ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

PARAMETER

SYMBOL RATINGS UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

-20

±12

-2.5

-10

-2.5

Idp

Idr

Channel Power Dissipation *

Channel Temperature

℃

Tch

150

Tstg -55~150

Storage Temperature Ramge

* When implemented on a ceramic PCB

1/5

12 3 4 5

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