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XP1D873TX PDF预览

XP1D873TX

更新时间: 2024-09-19 13:16:11
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管开关光电二极管
页数 文件大小 规格书
2页 32K
描述
Small Signal Field-Effect Transistor, 0.02A I(D), 2-Element, N-Channel, Silicon, Junction FET

XP1D873TX 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
配置:COMMON DRAIN, 2 ELEMENTS最大漏极电流 (ID):0.02 A
FET 技术:JUNCTIONJESD-30 代码:R-PDSO-G5
元件数量:2端子数量:5
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

XP1D873TX 数据手册

 浏览型号XP1D873TX的Datasheet PDF文件第2页 
Composite Transistors  
XP1D873  
Silicon N-channel junction FET  
Unit: mm  
For analog switching  
2.1±0.1  
1.25±0.1  
0.425  
0.425  
Features  
5
1
Two elements incorporated into one package.  
(Drain-coupled FETs)  
Reduction of the mounting area and assembly cost by one half.  
2
3
4
Low-frequency and low-noise J-FET.  
Basic Part Number of Element  
2SK1103 × 2 elements  
0.2±0.1  
1 : Source (FET1)  
4 : Gate (FET2)  
2 : Drain (FET1, 2) 5 : Gate (FET1)  
3 : Source (FET2) EIAJ : SC–88A  
S–Mini Type Package (5–pin)  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VGDS  
ID  
Ratings  
Unit  
V
Gate to drain voltage  
Drain current  
Gate current  
–50  
30  
Rating  
of  
element  
Marking Symbol: OC  
Internal Connection  
mA  
mA  
mW  
˚C  
IG  
10  
Total power dissipation  
PT  
150  
FET 1  
1
5
4
Overall Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
–55 to +150  
˚C  
2
3
FET 2  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Drain voltage  
Symbol  
VGDS  
Conditions  
IG = –10µA, VDS = 0  
min  
–50  
0.2  
typ  
max  
Unit  
V
Drain current  
IDSS  
VDS = 10V, VGS = 0  
6.0  
–10  
–3.5  
mA  
nA  
V
Gate cutoff current  
Gate to source cutoff voltage  
Mutual conductance  
Drain ON resistance  
IGSS  
VGS = –30V, VDS = 0  
VGSC  
gm  
VDS = 10V, ID = 10µA  
–1.5  
2.5  
300  
7
VDS = 10V, ID = 1mA, f = 1kHz  
VDS = 10mV, VGS = 0  
1.8  
mS  
RDS(on)  
Common source short-circuit input capacitance Ciss  
Common source reverse transfer capacitance Crss  
Common source short-circuit output capacitance Coss  
VDS = 10V, VGS = 0, f = 1MHz  
VDS = 10V, VGS = 0, f = 1MHz  
VDS = 10V, VGS = 0, f = 1MHz  
pF  
pF  
pF  
1.5  
1.5  
1

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