XP1E554

更新时间： 2024-09-18 22:34:47

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
2页	41K
描述
Silicon NPN epitaxial planer transistor

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中文翻译

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XP1E554 数据手册

Composite Transistors

XP1E554

Silicon NPN epitaxial planer transistor

Unit: mm

2.1±0.1

For high speed switching

1.25±0.1

0.425

Features

■

●

Two elements incorporated into one package.

(Tr1 emitter is connected to Tr2 collecter.)

●

Reduction of the mounting area and assembly cost by one half.

●

Low V_CE(sat)

Basic Part Number of Element

2SC3757 × 2 elements

■

0.2±0.1

●

1 : Base (Tr1)

3 : Base (Tr2)

2 : Emitter (Tr1)

Collector (Tr2)

4 : Emitter (Tr2)

5 : Collector (Tr1)

EIAJ : SC–88A

Absolute Maximum Ratings (Ta=25˚C)

■

S–Mini Type Package (5–pin)

Parameter

Symbol

V_CBO

V_CES

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

Marking Symbol: 5S

Internal Connection

Rating

element

100

˚C

Tr1

I_CP

300

P_T

150

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

I_EBO

h_FE

Conditions

min

typ

max

0.1

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 15V, I_E= 0

V_EB= 4V, I_C= 0

0.1

µA

Forward current transfer ratio

V_CE= 1V, I_C= 10mA

200

0.25

1.0

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 10mA, I_B= 1mA

0.17

I_C= 10mA, I_B= 1mA

Transition frequency

Collector output capacitance

Turn-on time

f_T

V_CB= 10V, I_E= –10mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

450

MHz

C_ob

t_on

t_off

t_stg

Turn-off time

Storage time

中文翻译

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