Datasheet > XP202A0003MR-12

XP202A0003MR-12

更新时间： 2024-09-19 12:56:31

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
5页	144K
描述
P-channel 4V (G-S) MOSFET

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数据手册

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XP202A0003MR-12 数据手册

XP202A0003MR-G

ETR1128-003

P-channel 4V (G-S) MOSFET

■FEATURES

・Low On Resistance

■APPLICATIONS

● Switching

・Ultra High Speed Switching

・4V Driving

・EU RoHS Compliant, Pb Free

■PRODUCT NAME

ORDER UNIT

3,000/Reel

PRODUCT NAME

PACKAGE

XP202A0003MR-G

SOT-23

^*The “-G” suffix indicates that the products are Halogen and

Antimony free as well as being fully RoHS compliant.

■ABSOLUTE MAXIMUM RATINGS

■PIN CONFIGURATION

PARMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current(Pulse)⁽* ¹⁾

Channel Power Dissipation ⁽*²⁾

Channel Temperature

Storage Temperature

V_DSS

V_GSS

I_D

-30

±20

-3

-12

I_DP

1. Gate

2. Source

3. Drain

℃

Tch

Tstg

+150

- 55 ~ +150

SOT-23(TOP VIEW）

⁽*¹⁾PW≦10μs,duty cycle≦1%

⁽*²⁾Ceramic Board (900mm2×0.8mm) Mounting

■ELECTRICAL CHARACTERISTICS

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

UNITS

MIN.

TYP.

MAX.

Drain-Source Breakdown Voltage

Drain-Source Cut-Off Current

Gate-Source Leakage Current

Gate-Source Cut-Off Voltage

Forward Transfer Admittance

V_(BR)DSS

I_DSS

I_D=-1mA, V_GS=0V

V_DS=-30V, V_GS=0V

V_GS=±16V,VDS=0V

V_DS=-10V,ID=-1mA

V_DS=-10V,ID=-3A

I_D=-1.5A,VGS=-10V

I_D=-1.0A,VGS=-4.5V

I_D=-1.0A,VGS=-4V

V_DS=-10V,f=1MHz

I_D=-1A

-30

μA

-1

I_GSS

±10

V_GS(off)

|yfs|

-1.2

-2.6

8.0

435

110

R_DS(ON)

Ciss

mΩ

Drain-Source ON Resistance

Input Capacity

Output Capacity

Coss

Feedback capacity

Turn on Delay time

Rise Time

Crss

td(on)

I_D=-1A

1.2

2.2

-0.8

Turn off Delay Time

Fall Time

td(off)

I_D=-1A

All Gate Charge Amount

Gate Source Charge Amount

Gate Drain Charge Amount

Diode Forward Voltage

V_DS=-15V, V_GS=-10V, I_D=-3A

I_S=-3A, V_GS=0V

Qgs

Qgd

V_SD

-1.2

1/5

12 3 4 5

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