XP2210

更新时间： 2024-09-18 22:11:19

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
2页	35K
描述
Silicon NPN epitaxial planer transistor

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XP2210 数据手册

Composite Transistors

XP2210

Silicon NPN epitaxial planer transistor

Unit: mm

For switching/digital circuits

2.1±0.1

1.25±0.1

0.425

Features

■

●

Two elements incorporated into one package.

(Base-coupled transistors with built-in resistor)

Reduction of the mounting area and assembly cost by one half.

●

Basic Part Number of Element

UN1210 × 2 elements

■

●

0.2±0.1

Absolute Maximum Ratings (Ta=25˚C)

1 : Emitter (Tr1)

2 : Base

3 : Emitter (Tr2)

4 : Collector (Tr2)

5 : Collector (Tr1)

EIAJ : SC–88A

■

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

Unit

S–Mini Type Package (5–pin)

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Rating

element

Marking Symbol: 9Q

Internal Connection

100

˚C

P_T

150

Overall Junction temperature

Storage temperature

T_j

150

Tr1

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

I_C= 10µA, I_E= 0

Collector to emitter voltage

V_CEO

I_CBO

I_CEO

I_EBO

h_FE

I_C= 2mA, I_B= 0

V_CB= 50V, I_E= 0

V_CE= 50V, I_B= 0

V_EB= 6V, I_C= 0

V_CE= 10V, I_C= 5mA

0.1

0.5

µA

Collector cutoff current

Emitter cutoff current

0.01

460

Forward current transfer ratio

Forward current transfer h_FEratio

160

0.5

h_FE(small/large)^*1V_CE= 10V, I_C= 5mA

0.99

Collector to emitter saturation voltage V_CE(sat)

I_C= 10mA, I_B= 0.3mA

0.25

0.2

Output voltage high level

Output voltage low level

Transition frequency

V_OH

V_OL

f_T

V_CC= 5V, V_B= 0.5V, R_L= 1kΩ

V_CC= 5V, V_B= 2.5V, R_L= 1kΩ

V_CB= 10V, I_E= –2mA, f = 200MHz

4.9

150

MHz

kΩ

Input resistance

R₁

–30%

+30%

^*1Ratio between 2 elements

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