Datasheet > XP202A0003PR-12

XP202A0003PR-12

更新时间： 2024-11-08 12:56:31

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
5页	162K
描述
P-channel 4V (G-S) MOSFET

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数据手册

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XP202A0003PR-12 数据手册

XP202A0003PR-G

ETR1129-003

P-channel 4V (G-S) MOSFET

■FEATURES

■APPLICATION

・Low On Resistance

● Switching

・Ultra High Speed Switching

・4V Driving

・EU RoHS Compliant, Pb Free

■PRODUCT NAME

ORDER UNIT

1,000/Reel

PRODUCT NAME

PACKAGE

SOT-89

XP202A0003PR-G

^*The “-G” suffix indicates that the products are Halogen and

Antimony free as well as being fully RoHS compliant.

^*The high-melting solder paste (lead-containing) is used as attachment.

■PIN CONFIGURATION

■ABSOLUTE MAXIMUM RATINGS

PARMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

-30

±20

Drain Current (DC)

-5

Drain Current(Pulse)⁽* ¹⁾

Channel Power Dissipation ⁽*²⁾

Channel Temperature

Storage Temperature

I_DP

-20

1.Gate

1.5

℃

2.Drain

3.Source

Tch

Tstg

+150

- 55 ~ +150

SOT-89(TOP VIEW）

⁽*¹⁾PW≦10μs,duty cycle≦1%

⁽*²⁾Ceramic Board (250mm²×0.8mm) Mounting

■ELECTRICAL CHARACTERISTICS

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

UNITS

MIN.

TYP.

MAX.

Drain-Source Breakdown Voltage

Drain-Source Cut-Off Current

Gate-Source Leakage Current

Gate-Source Cut-Off Voltage

Forward Transfer Admittance

V_(BR)DSS

I_DSS

I_D=-1mA, V_GS=0V

V_DS=-30V, V_GS=0V

V_GS=±16V,V_DS=0V

V_DS=-10V,I_D=-1mA

V_DS=-10V,I_D=-3A

I_D=-3A,V_GS=-10V

I_D=-1.5A,V_GS=-4.5V

I_D=-1.5A,V_GS=-4V

V_DS=-10V,f=1MHz

-30

μA

-1

I_GSS

±10

V_GS(off)

|yfs|

-1.2

-2.6

2.8

8.0

450

110

R_DS(ON)

Ciss

mΩ

Drain-Source ON Resistance

100

113

Input Capacity

Output Capacity

Coss

Feedback capacity

Turn on Delay time

Rise Time

Crss

td(on)

Turn off Delay Time

Fall Time

td(off)

All Gate Charge Amount

Gate Source Charge Amount

Gate Drain Charge Amount

Diode Forward Voltage

1.5

2.5

-0.9

Qgs

Qgd

V_SD

I_S=-5A, V_GS=0V

-1.2

1/5

12 3 4 5

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