XP162A12A6PR-G

更新时间： 2024-09-19 12:34:51

品牌	Logo	应用领域
特瑞仕 - TOREX		晶体晶体管
页数	文件大小	规格书
5页	293K
描述
Power MOSFET

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中文翻译

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技术参数
数据手册

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XP162A12A6PR-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	1.55
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	2.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

XP162A12A6PR-G 数据手册

XP162A12A6PR-G

ETR1126_003

Power MOSFET

■GENERAL DESCRIPTION

The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

The small SOT-89 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance

Rds(on) = 0.17

Rds(on) = 0.3

@ Vgs = -4.5V

@ Vgs = -2.5V

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Ultra High-Speed Switching

Dribing Voltage

: -2.5V

Gate Protect Diode Built-in

P-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-89

Environmentally Friendly : EU RoHS Compliant, Pb Free

■PIN CONFIGURATION/

■PRODUCT NAME

MARKING

PRODUCTS

XP162A12A6PR

XP162A12A6PR-G^(*)

PACKAGE

SOT-89

ORDER UNIT

1,000/Reel

G : Gate

S : Source

D : Drain

SOT-89

^(*)The “-G” suffix denotes Halogen and Antimony free as well as

being fully RoHS compliant.

* x represents production lot number.

■

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

■EQUIVALENT CIRCUIT

PARAMETER

SYMBOL RATINGS UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

-20

±12

-2.5

-10

-2.5

Idp

Idr

Channel Power Dissipation *

Channel Temperature

℃

Tch

150

Tstg -55~150

Storage Temperature

* When implemented on a ceramic PCB

1/5

12 3 4 5

中文翻译

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