XP161A11A1PR-G
ETR1122_003
Power MOSFET
■GENERAL DESCRIPTION
The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■FEATURES
■APPLICATIONS
●Notebook PCs
Low On-State Resistance : Rds(on)=0.065
Ω
@ Vgs=10V
@ Vgs=4.5V
:
Rds(on)=0.105
Ω
Ultra High-Speed Switching
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/
■PRODUCT NAME
MARKING
PRODUCTS
XP161A11A1PR
XP161A11A1PR-G(*)
PACKAGE
SOT-89
ORDER UNIT
1,000/Reel
1,000/Reel
G : Gate
S : Source
D : Drain
SOT-89
(*) The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
* x represents production lot number.
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
■EQUIVALENT CIRCUIT
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
30
V
V
±20
4
A
Idp
16
A
Idr
4
2
A
Channel Power Dissipation *
Channel Temperature
Storage Temperature
Pd
W
℃
℃
Tch
Tstg
150
-55~150
* When implemented on a ceramic PCB
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