XP162A12A6PR

更新时间： 2024-11-07 22:11:27

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	55K
描述
Power MOS FET

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中文翻译

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数据手册

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XP162A12A6PR 数据手册

Power MOS FET

XP162A12A6PR

■�Applications

●�Notebook PCs

◆�P-Channel Power MOS FET

◆�DMOS Structure

●�Cellular and portable phones

●�On - board power supplies

●�Li - ion battery systems

◆�Low On-State Resistance : 0.17

◆�Ultra High-Speed Switching

◆�Gate Protect Diode Built-in

◆�SOT - 89 Package

Ω (max)

■�General Description

■�Features

The XP162A12A6PR is a P-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently

set thereby saving energy.

Low on-state resistance : Rds (on) = 0.17Ω ( Vgs = -4.5V )

Rds (on) = 0.3Ω ( Vgs = -2.5V )

Ultra high-speed switching

Operational Voltage : -2.5V

Gate protect diode built-in

In order to counter static, a gate protect diode is built-in.

The small SOT-89 package makes high density mounting possible.

High density mounting : SOT - 89

■�Pin Configuration

■�Pin Assignment

FUNCTION

Gate

NUMBERPIN

NAME

Drain

Source

SOT - 89 Top View

■�Equivalent Circuit

■�Absolute Maximum Ratings

Ta=25 C

SYMBOL

RATINGS

UNITS

PARAMETER

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Continuous Channel

Vdss

Vgss

-20

+ 12

-2.5

Idp

Idr

-10

-2.5

Power Dissipation (note)

Channel Temperature

Storage Temperature

Tch

150

Tstg

-55 to 150

P - Channel MOS FET

( 1 device built-in )

( note ) : When implemented on a ceramic PCB

514

12 3 4

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