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XP161A1265PR

更新时间： 2024-09-18 22:34:47

品牌	Logo	应用领域
特瑞仕 - TOREX		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	55K
描述
Power MOS FET

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中文翻译

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技术参数
数据手册
替代型号

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XP161A1265PR 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.74	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	4 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

XP161A1265PR 数据手册

Power MOS FET

XP161A1265PR

ꢀ Applications

ꢀꢀN-Channel Power MOS FET

ꢀꢀDMOS Structure

ꢀꢀLow On-State Resistance: 0.055Ω MAX

ꢀꢀGate Protect Diode Built-in

ꢀꢀUltra High-Speed Switching

ꢀꢀSOT-89 Package

ꢀꢀNotebook PCs

ꢀꢀCellular and portable phones

ꢀꢀOn-board power supplies

ꢀꢀLi-ion battery systems

ꢀ General Description

The XP161A1265PR is a N-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

ꢀ Features

Low on-state resistance: Rds(on)=0.055Ω(Vgs=4.5V)

Rds(on)=0.095Ω(Vgs=2.5V)

Ultra high-speed switching

Gate Protect Diode Built-in

In order to counter static, a gate protect diode is built-in.

The small SOT-89 package makes high density mounting possible.

Operational Voltage: 2.5V

High density mounting: SOT-89

ꢀ Pin Configuration

ꢀ Pin Assignment

NUMBER

NAME

FUNCTION

Gate

Drain

Source

SOT-89

(TOP VIEW)

ꢀ Absolute Maximum Ratings

ꢀ Equivalent Circuit

Ta=25

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Vdss

Vgss

±12

Drain Current (Pulse)

Reverse Drain Current

Idp

Idr

Continuous Channel

Power Dissipation (note)

N-Channel MOS FET

(1 device built-in)

Channel Temperature

Storage Temperature

Tch

150

Tstg

-55~150

Note: When implemented on a glass epoxy PCB

494

12 3 4

中文翻译

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XP161A1265PR 替代型号

型号	品牌	替代类型	描述	数据表
XP161A1265PR-G	TOREX	完全替代	Power MOSFET

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