Datasheet > XP162A11C0PR_12

XP162A11C0PR_12

更新时间： 2024-11-08 12:34:51

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
5页	315K
描述
Power MOSFET

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中文翻译

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数据手册

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XP162A11C0PR_12 数据手册

XP162A11C0PR-G

ETR1125_003

Power MOSFET

■GENERAL DESCRIPTION

The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

The small SOT-89 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance

Rds(on) = 0.15

@ Vgs = -10V

@ Vgs = -4.5V

Rds(on) = 0.28

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Ultra High-Speed Switching

Driving Voltage

: -4.5V

Gate Protect Diode Built-in

P-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-89

Environmentally Friendly : EU RoHS Compliant, Pb Free

■PIN CONFIGURATION/

■PRODUCT NAME

MARKING

PRODUCTS

XP162A11C0PR

XP162A11C0PR-G^(*)

PACKAGE

SOT-89

ORDER UNIT

1,000/Reel

G : Gate

S : Source

D : Drain

SOT-89

^(*)The “-G” suffix denotes Halogen and Antimony free as well as

being fully RoHS compliant.

* x represents production lot number.

■

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

■EQUIVALENT CIRCUIT

PARAMETER

SYMBOL RATINGS UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

-30

±20

-2.5

Idp

-10

Idr

-2.5

Channel Power Dissipation *

Channel Temperature

Storage Temperature

℃

Tch

Tstg

150

-55~150

* When implemented on a ceramic PCB

1/5

12 3 4 5

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