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XP161A1265PR-G

更新时间： 2024-09-19 12:05:15

品牌	Logo	应用领域
特瑞仕 - TOREX		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	290K
描述
Power MOSFET

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中文翻译

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技术参数
数据手册
替代型号

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XP161A1265PR-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.71
配置：	Single	最大漏极电流 (Abs) (ID)：	4 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

XP161A1265PR-G 数据手册

XP161A1265PR-G

ETR1123_003

Power MOSFET

■GENERAL DESCRIPTION

The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

The small SOT-89 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance : Rds(on)=0.055

@ Vgs=4.5V

@ Vgs=2.5V

Rds(on)=0.095

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Ultra High-Speed Switching

Gate Protect Diode Built-in

Driving Voltage

: 2.5V

N-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-89

Environmentally Friendly : EU RoHS Compliant, Pb Free

■PIN CONFIGURATION/

■PRODUCT NAME

MARKING

PRODUCTS

XP161A1265PR

XP161A1265PR-G^(*)

PACKAGE

SOT-89

ORDER UNIT

1,000/Reel

SOT-89

G : Gate

S : Source

D : Drain

^(*)The “-G” suffix denotes Halogen and Antimony free as well as

being fully RoHS compliant.

* x represents production lot number.

■

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

■EQUIVALENT CIRCUIT

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

SYMBOL RATINGS UNITS

Vdss

Vgss

±12

Drain Current (Pulse)

Reverse Drain Current

Channel Power Dissipation *

Channel Temperature

Idp

Idr

℃

Tch

Tstg

150

-55~150

Storage Temperature

* When implemented on a ceramic PCB

1/5

12 3 4 5

中文翻译

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XP161A1265PR-G 替代型号

型号	品牌	替代类型	描述	数据表
XP161A1265PR	TOREX	完全替代	Power MOS FET

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