Datasheet > XP162A02D5PR

XP162A02D5PR

更新时间： 2024-11-08 07:56:51

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	59K
描述
Power MOS FET

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中文翻译

获取价格

数据手册

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XP162A02D5PR 数据手册

Power MOS FET

XP162A02D5PR

ꢀ Applications

ꢀꢀP-Channel Power MOS FET

ꢀꢀDMOS Structure

ꢀꢀLow On-State Resistance: 0.45Ω MAX

ꢀꢀUltra High-Speed Switching

ꢀꢀSOT-89 Package

ꢀꢀNotebook PCs

ꢀꢀCellular and portable phones

ꢀꢀOn-board power supplies

ꢀꢀLi-ion battery systems

ꢀ General Description

The XP162A02D5PR is a P-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

ꢀ Features

Low on-state resistance: Rds(on)=0.45Ω(Vgs=-4.5V)

Rds(on)=0.8Ω(Vgs=-2.5V)

Ultra high-speed switching

Operational Voltage: -2.5V

The small SOT-89 package makes high density mounting possible.

High density mounting: SOT-89

ꢀ Pin Configuration

ꢀ Pin Assignment

NUMBER

NAME

FUNCTION

Gate

Drain

Source

SOT-89

(TOP VIEW)

ꢀ Absolute Maximum Ratings

ꢀ Equivalent Circuit

Ta=25

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Vdss

Vgss

-20

±12

-1.5

-4.5

-1.5

Drain Current (Pulse)

Reverse Drain Current

Idp

Idr

Continuous Channel

Power Dissipation (note)

P-Channel MOS FET

(1 device built-in)

Channel Temperature

Storage Temperature

Tch

150

Tstg

-55~150

Note: When implemented on a glass epoxy PCB

506

12 3 4

中文翻译

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