Power MOS FET
XP162A11C0PR
◆�P-Channel Power MOS FET
◆�DMOS Structure
■�
Applications
●�Notebook PCs
●�Cellular and portable phones
●�On - board power supplies
●�Li - ion battery systems
◆�Low On-State Resistance : 0.28
◆�Ultra High-Speed Switching
◆�Gate Protect Diode Built-in
◆�SOT - 89 Package
Ω
(max)
■�General Description
■�Features
The XP162A11COPR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
Rds (on) = 0.15 ( Vgs = -10V )
Low on-state resistance :
Ω
Rds (on) = 0.28Ω ( Vgs = -4.5V )
Ultra high-speed switching
Operational Voltage :
-4.5V
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
Gate protect diode built-in
High density mounting :
SOT - 89
■�Pin Configuration
■�Pin Assignment
u
FUNCTION
Gate
PIN
NUMBERPIN
NAME
1
2
3
G
D
S
Drain
Source
1
2
3
G
D
S
SOT - 89 Top View
■�Equivalent Circuit
■�Absolute Maximum Ratings
O
Ta=25 C
SYMBOL
RATINGS
UNITS
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Vdss
Vgss
Id
-30
+ 20
-2.5
V
V
A
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Idp
Idr
Pd
-10
-2.5
2
A
A
W
Power Dissipation (note)
Channel Temperature
Storage Temperature
1
2
3
O
C
Tch
150
O
C
Tstg
-55 to 150
P - Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a ceramic PCB
510