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XP161A1355PR-G PDF预览

XP161A1355PR-G

更新时间: 2024-09-19 12:34:51
品牌 Logo 应用领域
特瑞仕 - TOREX 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
5页 315K
描述
Power MOSFET

XP161A1355PR-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):4 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:1
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)Base Number Matches:1

XP161A1355PR-G 数据手册

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XP161A1355PR-G  
ETR1124_003  
Power MOSFET  
GENERAL DESCRIPTION  
The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching  
characteristics.  
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.  
A gate protect diode is built-in to prevent static damage.  
The small SOT-89 package makes high density mounting possible.  
FEATURES  
APPLICATIONS  
Notebook PCs  
Low On-State Resistance  
:
:
:
Rds (on)= 0.05  
Rds (on)= 0.07  
Rds (on)= 0.15  
Ω
Ω
Ω
@ Vgs = 4.5V  
@ Vgs = 2.5V  
@ Vgs = 1.5V  
Cellular and portable phones  
On-board power supplies  
Li-ion battery systems  
Ultra High-Speed Switching  
Gate Protect Diode Built-in  
Driving Voltage  
: 1.5V  
N-Channel Power MOSFET  
DMOS Structure  
Small Package  
: SOT-89  
Environmentally Friendly : EU RoHS Compliant, Pb Free  
PIN CONFIGURATION/  
PRODUCT NAME  
MARKING  
PRODUCT NAME  
PACKAGE  
SOT-89  
ORDER UNIT  
1,000/Reel  
1,000/Reel  
XP161A1355PR  
XP161A1355PR-G(*)  
SOT-89  
G : Gate  
S : Source  
D : Drain  
(*) The “-G” suffix denotes Halogen and Antimony free as well as  
being fully RoHS compliant.  
* x represents production lot number.  
ABSOLUTE MAXIMUM RATINGS  
Ta = 25  
PARAMETER  
SYMBOL RATINGS UNITS  
EQUIVALENT CIRCUIT  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current (DC)  
Drain Current (Pulse)  
Reverse Drain Current  
Vdss  
Vgss  
Id  
20  
V
V
±8  
4
A
Idp  
16  
A
Idr  
4
2
A
Channel Power Dissipation *  
Channel Temperature  
Storage Temperature  
Pd  
W
Tch  
Tstg  
150  
-55~150  
* When implemented on a ceramic PCB  
1/5  

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