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XP161A13555PR PDF预览

XP161A13555PR

更新时间: 2024-11-08 03:13:59
品牌 Logo 应用领域
特瑞仕 - TOREX /
页数 文件大小 规格书
4页 477K
描述
N-Channel Power MOSFET

XP161A13555PR 数据手册

 浏览型号XP161A13555PR的Datasheet PDF文件第2页浏览型号XP161A13555PR的Datasheet PDF文件第3页浏览型号XP161A13555PR的Datasheet PDF文件第4页 
N-Channel Power MOSFET  
DMOS Structure  
APPLICATIONS  
Notebook PCs  
Low On-State Resistance : 0.05Ω(MAX.)  
Ultra High-Speed Switching  
SOT-89 Package  
Cellular and portable phones  
On-board power supplies  
Li-ion battery systems  
Gate Protect Diode Built-in  
GENERAL DESCRIPTION  
FEATURES  
Low On-State Resistance  
:
:
:
Rds (on)= 0.05  
Rds (on)= 0.07  
Rds (on)= 0.15  
Ω
Ω
Ω
@ Vgs = 4.5V  
@ Vgs = 2.5V  
@ Vgs = 1.5V  
The XP161A1355PR is an N-channel Power MOSFET with low  
on-state resistance and ultra high-speed switching characteristics.  
Because high-speed switching is possible, the IC can be  
efficiently set thereby saving energy.  
Ultra High-Speed Switching  
Gate Protect Diode Built-in  
Driving Voltage  
High Density Mounting : SOT-89  
A gate protect diode is built-in to prevent static damage.  
The small SOT-89 package makes high density mounting possible.  
: 1.5V  
PIN CONFIGURATION  
EQUIVALENT CIRCUIT  
PIN ASSIGNMENT  
PIN  
PIN  
FUNCTION  
NUMBER  
NAME  
1
2
3
G
D
S
Gate  
Drain  
Source  
ABSOLUTE MAXIMUM RATINGS  
Ta = 25  
SYMBOL RATINGS UNITS  
PARAMETER  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current (DC)  
Drain Current (Pulse)  
Reverse Drain Current  
Vdss  
Vgss  
Id  
20  
V
V
±8  
4
A
Idp  
16  
A
Idr  
4
2
A
Channel Power Dissipation *  
Channel Temperature  
Pd  
W
Tch  
Tstg  
150  
-55~150  
Storage Temperature Range  
* When implemented on a ceramic PCB  
XP161A1355PR ETR1124_001.doc  
1526  

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