◆N-Channel Power MOSFET
◆DMOS Structure
■APPLICATIONS
●Notebook PCs
◆Low On-State Resistance : 0.05Ω(MAX.)
◆Ultra High-Speed Switching
◆SOT-89 Package
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
◆Gate Protect Diode Built-in
■GENERAL DESCRIPTION
■FEATURES
Low On-State Resistance
:
:
:
Rds (on)= 0.05
Rds (on)= 0.07
Rds (on)= 0.15
Ω
Ω
Ω
@ Vgs = 4.5V
@ Vgs = 2.5V
@ Vgs = 1.5V
The XP161A1355PR is an N-channel Power MOSFET with low
on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be
efficiently set thereby saving energy.
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
High Density Mounting : SOT-89
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
: 1.5V
■PIN CONFIGURATION
■EQUIVALENT CIRCUIT
■PIN ASSIGNMENT
PIN
PIN
FUNCTION
NUMBER
NAME
1
2
3
G
D
S
Gate
Drain
Source
■
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
SYMBOL RATINGS UNITS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
20
V
V
±8
4
A
Idp
16
A
Idr
4
2
A
Channel Power Dissipation *
Channel Temperature
Pd
W
℃
℃
Tch
Tstg
150
-55~150
Storage Temperature Range
* When implemented on a ceramic PCB
XP161A1355PR ETR1124_001.doc
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