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XP161A1355PR PDF预览

XP161A1355PR

更新时间: 2024-09-18 22:34:47
品牌 Logo 应用领域
特瑞仕 - TOREX 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 165K
描述
POWER MOSFET

XP161A1355PR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
配置:Single最大漏极电流 (Abs) (ID):4 A
FET 技术:METAL-OXIDE SEMICONDUCTOR湿度敏感等级:1
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

XP161A1355PR 数据手册

 浏览型号XP161A1355PR的Datasheet PDF文件第2页浏览型号XP161A1355PR的Datasheet PDF文件第3页浏览型号XP161A1355PR的Datasheet PDF文件第4页 
11S_40XP161A1355PR 02.9.12 4:15 PM ページ 846  
Power MOS FET  
NN-Channel Power MOS FET  
NDMOS Structure  
■Applications  
GNotebook PCs  
GCellular and portable phones  
GOn-board power supplies  
GLi-ion battery systems  
NLow On-State Resistance : 0.05(max)  
NUltra High-Speed Switching  
NSOT-89 Package  
NGate Protect Diode Built-in  
■General Description  
■Features  
The XP161A1355PR is an N-Channel Power MOS FET with low on-state  
resistance and ultra high-speed switching characteristics.  
Because high-speed switching is possible, the IC can be efficiently set  
thereby saving energy.  
Low on-state resistance: Rds (on) = 0.05( Vgs = 4.5V )  
: Rds (on) = 0.07( Vgs = 2.5V )  
: Rds (on) = 0.15( Vgs = 1.5V )  
Ultra high-speed switching  
A gate protect diode is built-in to prevent static damage.  
The small SOT-89 package makes high density mounting possible.  
Gate protect diode built-in  
Operational Voltage  
: 1.5V  
High density mounting : SOT-89  
■Pin Configuration  
■Pin Assignment  
PIN  
NUMBER  
PIN  
NAME  
FUNCTION  
1
2
3
G
D
S
Gate  
Drain  
1
G
2�  
D
3�  
S
Source  
SOT-89�  
(TOP VIEW)�  
■Equivalent Circuit  
■Absolute Maximum Ratings  
11  
O
Ta=25 C  
UNITS  
SYMBOL  
RATINGS  
PARAMETER  
Drain - Source Voltage  
Gate - Source Voltage  
Drain Current (DC)  
Drain Current (Pulse)  
Reverse Drain Current  
Continuous Channel  
Vdss  
Vgss  
Id  
20  
±8  
4
V
V
A
Idp  
Idr  
Pd  
16  
4
A
A
1
2�  
3�  
2
W
Power Dissipation (note)  
Channel Temperature  
Storage Temperature  
O
C
Tch  
150  
N-Channel MOS FET�  
( 1 device built-in )  
O
C
Tstg  
- 55 ~ 150  
( note ) : When implemented on a ceramic PCB  
846  

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