XP161A11A1PR-G

更新时间： 2024-11-08 12:05:15

品牌	Logo	应用领域
特瑞仕 - TOREX		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	318K
描述
Power MOSFET

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中文翻译

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技术参数
数据手册

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XP161A11A1PR-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.7
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin (Sn)	Base Number Matches：	1

XP161A11A1PR-G 数据手册

XP161A11A1PR-G

ETR1122_003

Power MOSFET

■GENERAL DESCRIPTION

The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

The small SOT-89 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance : Rds(on)=0.065

@ Vgs=10V

@ Vgs=4.5V

Rds(on)=0.105

Ultra High-Speed Switching

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Gate Protect Diode Built-in

Driving Voltage

: 4.5V

N-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-89

Environmentally Friendly : EU RoHS Compliant, Pb Free

■PIN CONFIGURATION/

■PRODUCT NAME

MARKING

PRODUCTS

XP161A11A1PR

XP161A11A1PR-G^(*)

PACKAGE

SOT-89

ORDER UNIT

1,000/Reel

G : Gate

S : Source

D : Drain

SOT-89

^(*)The “-G” suffix denotes Halogen and Antimony free as well as

being fully RoHS compliant.

* x represents production lot number.

■ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

■EQUIVALENT CIRCUIT

PARAMETER

SYMBOL RATINGS UNITS

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

±20

Idp

Idr

Channel Power Dissipation *

Channel Temperature

Storage Temperature

℃

Tch

Tstg

150

-55~150

* When implemented on a ceramic PCB

1/5

12 3 4 5

中文翻译

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