Datasheet > XP161A11A1PR_1

XP161A11A1PR_1

更新时间： 2024-11-08 02:54:59

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
5页	412K
描述
Power MOSFET

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XP161A11A1PR_1 数据手册

XP161A11A1PR

ETR1122_001

Power MOSFET

■GENERAL DESCRIPTION

The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

The small SOT-89 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance : Rds(on)=0.065

@ Vgs=10V

@ Vgs=4.5V

Rds(on)=0.105

Ultra High-Speed Switching

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Gate Protect Diode Built-in

Driving Voltage

: 4.5V

N-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-89

■PIN CONFIGURATION

■EQUIVALENT CIRCUIT

■PIN ASSIGNMENT

PIN NUMBER

PIN NAME

FUNCTION

Gate

Drain

Source

■

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

PARAMETER

SYMBOL RATINGS UNITS

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

±20

Idp

Idr

Channel Power Dissipation *

Channel Temperature

℃

Tch

Tstg

150

Storage Temperature Range

-55~150

* When implemented on a ceramic PCB

1/5

12 3 4 5

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