SSMMDDTTyypppee
TransistIoCrs
Product specification
XP161
SOT-89
Unit: mm
■ Features
+0.1
+0.1
4.50-0.1
1.50-0.1
+0.1
● Low on-state resistance : Rds (on) = 0.055Ω ( Vgs = 4.5V )
1.80-0.1
Rds (on) = 0.095Ω ( Vgs = 2.5V )
Rds (on) = 0.20Ω ( Vgs = 1.5V )
● Ultra high-speed switching
3
2
1
+0.1
+0.1
+0.1
0.48-0.1
0.53-0.1
0.44-0.1
●
Gate protect diode built-in
● Driving Voltage : 1.5V
1 Gate
1. Base
1. Source
+0.1
3.00-0.1
2 Drain
2. Collector
2. Drain
3 Source
3. Emiitter
3. Gate
1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Symbol
VDSS
VGSS
ID
Rating
Unit
V
20
V
±8
4
A
Drain current(pulse)
IDP
16
A
Power dissipation
*
PD
2
W
℃
℃
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* When implemented on a ceramic PCB
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
VDS=20V,VGS=0
VGS=±8V,VDS=0
Min
0.5
Typ Max
10
Unit
Drain cut-off current
IDSS
IGSS
μA
Gate leakage current
±10 μA
Gate to source cutoff voltage
Forward transfer admittance
VGS(off) VDS=10V,ID=1mA
1.2
V
s
VDS=10V,ID=2A
VGS=4.5V,ID=2A
VGS=2.5V,ID=2A
VGS=1.5V,ID=0.5A
10
│Yfs│
0.042 0.055
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
Drain to source on-state resistance
RDS(on)
0.070 0.095
0.12 0.20
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
390
210
90
VDS=10V,VGS=0,f=1MHZ
10
15
ID=2A,VGS(on)=5V,VDD=10V
Turn-off delay time
Fall time
td(off)
tf
85
45
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