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XP152A12COMR PDF预览

XP152A12COMR

更新时间: 2024-11-08 07:56:51
品牌 Logo 应用领域
金誉半导体 - HTSEMI /
页数 文件大小 规格书
4页 2333K
描述
20 V P-Channel Enhancement Mode MOSFET

XP152A12COMR 数据手册

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XP152A12COMR  
20V P-Channel Enhancement Mode MOSFET  
VDS= -20V  
RDS(ON), Vgs@-4.5V, Ids@-2.8A  
RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m  
130m  
Features  
Advanced trench process technology  
High Density Cell Design For Ultra Low On-Resistance  
Package Dimensions  
D
G
S
SOT-23(PACKAGE)  
Millimeter  
Millimeter  
Min. Max.  
1.90 REF.  
REF.  
REF.  
Min.  
Max.  
3.10  
2.80  
1.60  
0.50  
0.10  
A
B
C
D
E
2.70  
2.40  
1.40  
0.35  
0
G
H
K
J
1.00  
0.10  
0.40  
0.85  
1.30  
0.20  
-
L
1.15  
F
0.45  
0.55  
M
0°  
10°  
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current 1)  
VDS  
VGS  
ID  
-20  
±8  
V
A
-2.2  
-8  
IDM  
PD  
TA = 25o  
TA = 75oC  
1.25  
0.8  
Maximum Power Dissipation2)  
W
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to 150  
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)  
100  
166  
oC/W  
R
thJA  
Junction-to-Ambient Thermal Resistance (PCB mounted) 3)  
Notes  
1)  
Pulse width limited by maximum junction temperature.  
2)  
Surface Mounted on FR4 Board, t v 5 sec.  
3)  
Surface Mounted on FR4 Board.  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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