Datasheet > XP1601

XP1601

更新时间： 2024-11-07 22:34:47

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
5页	58K
描述
Silicon PNP(PNP) epitaxial planer transistor

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数据手册

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XP1601 数据手册

Composite Transistors

XP1601

Silicon PNP epitaxial planer transistor (Tr1)

Silicon NPN epitaxial planer transistor (Tr2)

Unit: mm

For general amplification

2.1±0.1

1.25±0.1

0.425

Features

■

●

Two elements incorporated into one package.

(Emitter-coupled transistors)

Reduction of the mounting area and assembly cost by one half.

●

Basic Part Number of Element

2SB709A+2SD601A

■

●

0.2±0.1

Absolute Maximum Ratings (Ta=25˚C)

1 : Base (Tr1)

2 : Emitter

3 : Base (Tr2)

4 : Collector (Tr2)

5 : Collector (Tr1)

EIAJ : SC–88A

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–60

Unit

S–Mini Type Package (5–pin)

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

Junction temperature

Storage temperature

–50

Marking Symbol: 7S

Internal Connection

Tr1

–7

–100

–200

I_CP

Tr1

V_CBO

V_CEO

V_EBO

I_C

Tr2

100

˚C

Tr2

I_CP

200

P_T

150

T_j

150

Overall

T_stg

–55 to +150

˚C

12 3 4 5

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