Datasheet > XP152A12C0MR-G

XP152A12C0MR-G

更新时间： 2024-11-08 12:31:03

品牌	Logo	应用领域
TYSEMI		二极管开关栅电话
页数	文件大小	规格书
2页	351K
描述
Cellular and portable phones Ultra High-Speed Switching Gate Protect Diode Built-in

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XP152A12C0MR-G 数据手册

Product specification

XP152A12C0MR-G

Power MOSFET

■GENERAL DESCRIPTION

The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching

characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

The small SOT-23 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance : Rds(on) = 0.3

@ Vgs = -4.5V

@ Vgs = -2.5V

Rds(on) = 0.5

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Ultra High-Speed Switching

Gate Protect Diode Built-in

Driving Voltage

: -2.5V

P-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-23

Environmentally Friendly : EU RoHS Compliant, Pb Free

■PIN CONFIGURATION/

■PIN ASSIGNMENT

MARKING

PRODUCTS

XP152A12C0MR

XP152A12C0MR-G^(*)

PACKAGE

ORDER UNIT

3,000/Reel

SOT-23

G：Gate

SOT-23

^(*)The “-G” suffix denotes Halogen and Antimony free as well as

being fully RoHS compliant.

S：Source

D：Drain

* x represents production lot number.

■

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

■EQUIVALENT CIRCUIT

PARAMETER

SYMBOL RATINGS UNITS

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Vdss

Vgss

-20

±12

-0.7

Drain Current (Pulse)

Reverse Drain Current

Channel Power Dissipation *

Channel Temperature

Storage Temperature

Idp

-2.8

Idr

-0.7

0.5

℃

Tch

Tstg

150

-55~150

* When implemented on a ceramic PCB

http://www.twtysemi.com

sales@twtysemi.com

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