Datasheet > XP152A12COMR

XP152A12COMR

更新时间： 2024-09-19 12:49:55

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	54K
描述
Power MOS FET

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XP152A12COMR 数据手册

Power MOS FET

XP152A12C0MR

◆�P-Channel Power MOS FET

◆�DMOS Structure

■�Applications

●�Notebook PCs

●�Cellular and portable phones

●�On - board power supplies

●�Li - ion battery systems

◆�Low On-State Resistance : 0.3

Ω

(max)

◆�Ultra High-Speed Switching

◆�Gate Protect Diode Built-in

◆�SOT - 23 Package

■�General Description

■�Features

The XP152A12C0MR is a P-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently

set thereby saving energy.

Rds (on) = 0.3 ( Vgs = -4.5V )

Low on-state resistance :

Ω

Rds (on) = 0.5Ω ( Vgs = -2.5V )

Ultra high-speed switching

Gate Protect Diode Built-in

In order to counter static, a gate protect diode is built-in.

The small SOT-23 package makes high density mounting possible.

-2.5V

Operational Voltage :

High density mounting :

SOT - 23

■�Pin Configuration

■�Pin Assignment

FUNCTION

Gate

PIN NUMBER

PIN NAME

Source

Drain

SOT - 23 Top View

■�Equivalent Circuit

Absolute Maximum Ratings

■�

Ta=25 C

SYMBOL

RATINGS

UNITS

PARAMETER

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Vdss

Vgss

-20V

+ 12

-0.7

Drain Current (Pulse)

Reverse Drain Current

Continuous Channel

Idp

Idr

-2.8

-0.7

0.5

Power Dissipation (note)

Channel Temperature

Storage Temperature

Tch

150

Tstg

-55 to 150

P - Channel MOS FET

( 1 device built-in )

( note ) : When implemented on a ceramic PCB

474

12 3 4

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