Datasheet > STW65N023M9-4

STW65N023M9-4

更新时间： 2024-11-29 14:57:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	427K
描述
N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO247-4 package

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STW65N023M9-4 数据手册

STW65N023M9-4

Datasheet

N-channel 650 V, 19.9 mΩ typ., 92 A MDmesh M9 Power MOSFET

in a TO247-4 package

Features

DS(on)

max.

Order code

STW65N023M9-4

650 V

23.0 mΩ

•

Worldwide best FOM R_DS(on)*Q_gamong silicon-based devices

Higher V_DSSrating

Higher dv/dt capability

Excellent switching performance thanks to the extra driving source pin

TO247-4

Drain(1, TAB)

Easy to drive

100% avalanche tested

Applications

Gate(4)

•

High efficiency switching applications

Driver

source(3)

Description

Power

source(2)

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very

low R_DS(on)per area. The silicon based M9 technology benefits from a multi-drain

manufacturing process which allows an enhanced device structure. The resulting

product has one of the lower on-resistance and reduced gate charge values, among

all silicon based fast switching super-junction Power MOSFETs, making it particularly

suitable for applications that require superior power density and outstanding

efficiency.

ND1TPS2DS3G4

Product status link

STW65N023M9-4

Product summary

Order code

Marking

STW65N023M9-4

65N023M9

TO247-4

Package

Packing

Tube

DS14037 - Rev 3 - July 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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