Datasheet > STD65N160M9

STD65N160M9

更新时间： 2024-11-03 14:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	337K
描述
N-channel 650 V, 132 mOhm typ., 20 A MDmesh M9 Power MOSFET in a DPAK package

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STD65N160M9 数据手册

STD65N160M9

Datasheet

N-channel 650 V, 132 mΩ typ., 20 A MDmesh M9 Power MOSFET

in a DPAK package

Features

DS(on)

max.

Order code

TAB

STD65N160M9

650 V

160 mΩ

20 A

•

Worldwide best FOM R_DS(on)*Qg among silicon-based devices

Higher V_DSSrating

DPAK

Higher dv/dt capability

D(2, TAB)

Excellent switching performance

Easy to drive

100% avalanche tested

Zener-protected

G(1)

Applications

•

High efficiency switching applications

S(3)

AM01476v1_tab

Description

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very

low R_DS(on)per area. The silicon based M9 technology benefits from a multi-drain

manufacturing process which allows an enhanced device structure. The resulting

product has one of the lower on-resistance and reduced gate charge values,

among all silicon based fast switching super-junction Power MOSFETs, making

it particularly suitable for applications that require superior power density and

outstanding efficiency.

Product status link

STD65N160M9

Product summary

Order code

STD65N160M9

Marking

Package

Packing

65N160M9

DPAK

Tape and reel

DS14010 - Rev 3 - May 2023

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...15

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