Datasheet > STD6528EF

STD6528EF

更新时间： 2024-01-29 13:11:26

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
5页	320K
描述
NPN Silicon Transistor

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中文翻译

获取价格

技术参数
数据手册

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STD6528EF 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

STD6528EF 数据手册

STD6528EF

NPN Silicon Transistor

Application

PIN Connection

• Micom Direct drive and switching Application

Features

• Very low saturation voltage: V_CE(sat)=0.2V (Max.)

@ I_C=50mA, I_B=5mA

• High DC current gain: h_FE=1000~2500

• Small size SMD package

SOT-523F

Ordering Information

Type NO.

Marking

Package Code

ZB □

① ②

STD6528EF

SOT-523F

①Device Code ② Year&Week Code

Absolute Maximum Ratings

Characteristic

Ta=25°C

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

P_C

T_J

T_stg

-55~150

°C

Electrical Characteristics

Characteristic

Ta=25°C

Symbol

BV_CEO

I_CBO

Test Condition

Min. Typ. Max. Unit

Collector-emitter breakdown voltage

I_C=1mA, I_B=0

0.1

2500

μA

Collector cut-off current

Emitter cut-off current

DC current gain

V_CB=25V, I_E=0

I_EBO

V_EB=5V, I_C=0

h_FE

V_CE=2V, I_C=4mA

I_C=100 ㎂, I_B=10 ㎂

I_C=50mA, I_B=5mA

V_CE=2V, I_C=4mA

V_CE=10V, I_C=1mA

V_CB=10V, I_E=0, f=1MHz

1000

0.03

Collector-emitter saturation voltage

V_CE(sat)

0.2

Base-emitter voltage

V_BE

f_T

0.6

150

1.5

Transition frequency

MHz

Collector output capacitance

C_ob

KSD-T5E003-001

12 3 4 5

中文翻译

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