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STB85NF55 PDF预览

STB85NF55

更新时间: 2024-09-12 22:29:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 378K
描述
N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET⑩ II POWER MOSFET

STB85NF55 数据手册

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STB85NF55  
STP85NF55  
2
N-CHANNEL 55V - 0.0062 - 80A D PAK/TO-220  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STB85NF55  
STP85NF55  
55 V  
55 V  
<0.008 Ω  
<0.008 Ω  
80 A  
80 A  
TYPICAL R (on) = 0.0062 Ω  
DS  
FOR THROUGH-HOLE VERSION CONTACT  
SALES OFFICE  
3
1
3
2
2
D PAK  
TO-263  
DESCRIPTION  
1
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
(Suffix “T4”)  
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
55  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R  
Gate- source Voltage  
= 20 k)  
GS  
55  
V
DGR  
V
± 20  
80  
V
GS  
I ()  
D
Drain Current (continuous) at T = 25°C  
A
C
I
D
Drain Current (continuous) at T = 100°C  
80  
A
C
I
(•)  
Drain Current (pulsed)  
320  
300  
2.0  
10  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
mJ  
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
E
980  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
(1)  
(2)  
I
80A, di/dt 300A/µs, V  
V  
V
, T T  
(BR)DSS JMAX  
DD  
()Current Limited by Package  
(•) Pulse width limited by safe operating area  
SD  
DD  
= 40A  
j
.
o
Starting T = 25 C  
I
= 25V  
j
D
January 2003  
1/10  

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