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STB85NS04Z PDF预览

STB85NS04Z

更新时间: 2024-09-15 20:00:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网开关脉冲晶体管
页数 文件大小 规格书
15页 388K
描述
60A, 33V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, I2PAK, 3 PIN

STB85NS04Z 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
雪崩能效等级(Eas):550 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:33 V最大漏极电流 (ID):60 A
最大漏源导通电阻:0.015 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB85NS04Z 数据手册

 浏览型号STB85NS04Z的Datasheet PDF文件第2页浏览型号STB85NS04Z的Datasheet PDF文件第3页浏览型号STB85NS04Z的Datasheet PDF文件第4页浏览型号STB85NS04Z的Datasheet PDF文件第5页浏览型号STB85NS04Z的Datasheet PDF文件第6页浏览型号STB85NS04Z的Datasheet PDF文件第7页 
STB85NS04Z  
STB85NS04Z-1  
N-channel 11m- 80A - D2PAK - I2PAK  
SAFeFET™ Power MOSFET  
General features  
Type  
VDSS  
RDS(on)  
ID  
STB85NS04Z  
Clamped  
Clamped  
< 0.01580A(1)  
< 0.01580A(1)  
STB85NS04Z-1  
1. Current limited by wire bonding  
3
3
2
100% avalanche tested  
1
1
PAK  
Low capacitance and gate charge  
PAK  
175°C maximum junction temperature  
Description  
This fully clamped Power MOSFET is produced  
by using the latest advanced Company’s Mesh  
Overlay™ process which is based on a novel strip  
layout. The inherent benefits of the new  
Internal schematic diagram  
technology coupled with the extra clamping  
capabilities make this product particularly suitble  
for the harshest operation conditions such as  
those encountered inthe automotive environment.  
Any other application requiring extra ruggedness  
is also recommende.  
Applications  
Swihing application  
– Automotive  
Order codes  
Part number  
Marking  
Package  
Packaging  
STB85NS04ZT4  
STB85NS04Z-1  
B85NS04Z  
PAK  
PAK  
Tape &reel  
Tube  
B85NS04Z-1  
September 2006  
Rev 1  
1/15  
www.st.com  
15  

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