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STB95N4LF3 PDF预览

STB95N4LF3

更新时间: 2024-11-24 21:12:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关脉冲晶体管
页数 文件大小 规格书
16页 1108K
描述
80A, 40V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

STB95N4LF3 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, TO-263, D2PAK-3针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84雪崩能效等级(Eas):400 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):110 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB95N4LF3 数据手册

 浏览型号STB95N4LF3的Datasheet PDF文件第2页浏览型号STB95N4LF3的Datasheet PDF文件第3页浏览型号STB95N4LF3的Datasheet PDF文件第4页浏览型号STB95N4LF3的Datasheet PDF文件第5页浏览型号STB95N4LF3的Datasheet PDF文件第6页浏览型号STB95N4LF3的Datasheet PDF文件第7页 
STB95N4LF3  
STD95N4LF3  
N-channel 40 V, 5.0 m, 80 A DPAK, D2PAK  
STripFET™ III Power MOSFET  
Features  
RDS(on)  
max  
Type  
VDSS  
ID  
PD  
STD95N4LF3  
40 V < 6.0 m80 A(1) 110 W  
STB95N4LF3 (2) 40 V < 6.0 m80 A 110 W  
3
3
1. Value limited by wire bonding  
1
1
2. All data which refers solely to the D²PAK package is  
preliminary  
D²PAK  
DPAK  
100% avalanche tested  
Logic level drive  
Applications  
Switching application  
Figure 1.  
Internal schematic diagram  
– Automotive  
D (TAB or 2)  
Description  
This STripFET™ III Power MOSFET technology is  
among the latest improvements, which have been  
especially tailored to minimize on-state resistance  
providing superior switching performance.  
G(1)  
S(3)  
AM01474v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STD95N4LF3  
STB95N4LF3  
95N4LF3  
95N4LF3  
DPAK  
Tape and reel  
Tape and reel  
PAK  
July 2009  
Doc ID 15372 Rev 2  
1/16  
www.st.com  
16  

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