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STB9K18P PDF预览

STB9K18P

更新时间: 2024-11-06 19:49:51
品牌 Logo 应用领域
SSDI 局域网二极管
页数 文件大小 规格书
2页 281K
描述
Trans Voltage Suppressor Diode, 9000W, 13V V(RWM), Unidirectional, 1 Element, Silicon,

STB9K18P 技术参数

生命周期:Active包装说明:O-MUPM-D1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.79
击穿电压标称值:18 V外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-MUPM-D1
最大非重复峰值反向功率耗散:9000 W元件数量:1
端子数量:1封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
极性:UNIDIRECTIONAL最大功率耗散:60 W
认证状态:Not Qualified最大重复峰值反向电压:13 V
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子形式:SOLDER LUG
端子位置:UPPERBase Number Matches:1

STB9K18P 数据手册

 浏览型号STB9K18P的Datasheet PDF文件第2页 

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