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STB9K16PR PDF预览

STB9K16PR

更新时间: 2024-11-24 19:49:51
品牌 Logo 应用领域
SSDI 局域网二极管
页数 文件大小 规格书
2页 281K
描述
Trans Voltage Suppressor Diode, 9000W, 13V V(RWM), Unidirectional, 1 Element, Silicon,

STB9K16PR 技术参数

生命周期:Active包装说明:O-MUPM-D1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.79
Is Samacsys:N击穿电压标称值:16 V
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-MUPM-D1最大非重复峰值反向功率耗散:9000 W
元件数量:1端子数量:1
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT极性:UNIDIRECTIONAL
最大功率耗散:60 W认证状态:Not Qualified
最大重复峰值反向电压:13 V子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子形式:SOLDER LUG端子位置:UPPER
Base Number Matches:1

STB9K16PR 数据手册

 浏览型号STB9K16PR的Datasheet PDF文件第2页 

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