Datasheet > STB8NS25T4

STB8NS25T4

更新时间： 2024-11-04 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
9页	160K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 8A I(D) \| TO-263AB

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STB8NS25T4 数据手册

STB8NS25

N-CHANNEL 250V - 0.38

Ω - 8A D PAK

MESH OVERLAY MOSFET

TYPE

DS(on)

DSS

STB8NS25

250 V

< 0.45 Ω

8 A

■

TYPICAL R (on) = 0.38 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performance. The new patented STrip layout cou-

pled with the Company’s proprietary edge termina-

tion structure, makes it suitable in coverters for

lighting applications.

D PAK

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

Unit

250

Drain-gate Voltage (R = 20 kΩ)

250

DGR

Gate- source Voltage

± 20

(*)

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

( )

●

Drain Current (pulsed)

Total Dissipation at T = 25°C

TOT

Derating Factor

0.64

W/°C

V/ns

°C

dv/dt (1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

–65 to 150

150

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1) I ≤ 8A, di/dt≤300 A/µs, V ≤ V

, Tj≤T

(BR)DSS jMAX

(*)Limited only by maximum temperature allowed

July 2001

1/9

12 3 4 5 6 7...9

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