是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-262AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.83 |
雪崩能效等级(Eas): | 550 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 33 V | 最大漏极电流 (Abs) (ID): | 80 A |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.015 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 215 W | 最大脉冲漏极电流 (IDM): | 320 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB85NS04ZT4 | STMICROELECTRONICS |
获取价格 |
80A, 33V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 | |
STB86600 | AXIOMTEK |
获取价格 |
VGA and LCD supported | |
STB86600_14 | AXIOMTEK |
获取价格 |
VGA and LCD supported | |
STB86600VEA | AXIOMTEK |
获取价格 |
VGA and LCD supported | |
STB8N65M5 | STMICROELECTRONICS |
获取价格 |
N-channel 650 V, 0.56 Ω, 7 A MDmesh? V Power | |
STB8N90K5 | STMICROELECTRONICS |
获取价格 |
N沟道900 V、0.60 Ohm典型值、8 A MDmesh K5功率MOSFET,D2 | |
STB8NA50 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
STB8NA50-1 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-262VAR | |
STB8NC50 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh⑩ | |
STB8NC50-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/ |