Datasheet > STB90NF03

STB90NF03

更新时间： 2024-11-05 02:52:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	590K
描述
N-CHANNEL 30V - 0.0065 ohm - 95A DPAK STripFET⑩ II POWER MOSFET

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STB90NF03 数据手册

STB95NF03

N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK

STripFET™ II POWER MOSFET

TYPE

DSS

DS(on)

STB95NF03

30 V

<0.007 Ω

80 A

■

TYPICAL R (on) = 0.0065 Ω

STANDARD THRESHOLD DRIVE

100% AVALANCHE TESTED

SURFACE-MOUNTING D PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

D PAK

TO-263

(Suffix “T4”)

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

DC-DC & DC-AC CONVERTERS

SOLENOID AND RELAY DRIVERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R

Gate- source Voltage

= 20 kΩ)

DGR

± 20

Drain Current (continuous) at T = 25°C

I ( )

Drain Current (continuous) at T = 100°C

(•)

Drain Current (pulsed)

320

150

Total Dissipation at T = 25°C

tot

Derating Factor

W/°C

V/ns

(1)

(2)

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

3.0

720

dv/dt

stg

-55 to 175

°C

Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(*) Current Limited by Package

(1) I

≤ 95A, di/dt ≤ 150A/µs, V

≤ V

, T ≤ T

(BR)DSS

(2) Starting T = 25 C, I = 47.5A, V = 25V

JMAX.

March 2003

1/9

12 3 4 5 6 7...9

中文翻译

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