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STB8NC50 PDF预览

STB8NC50

更新时间: 2024-11-04 22:24:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 444K
描述
N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh⑩II MOSFET

STB8NC50 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:D2PAK-3针数:3
Reach Compliance Code:not_compliant风险等级:5.74
雪崩能效等级(Eas):600 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):8 A最大漏源导通电阻:0.85 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):135 W最大脉冲漏极电流 (IDM):32 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB8NC50 数据手册

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STB8NC50  
2
N-CHANNEL 500V - 0.7- 8A D PAK  
PowerMesh™II MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STB8NC50  
500V  
< 0.85 Ω  
8 A  
TYPICAL R (on) = 0.7Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
3
1
DESCRIPTION  
2
D PAK  
The PowerMESHII is the evolution of the first  
generation of MESH OVERLAY™. The layout re-  
finements introduced greatly improve the Ron*area  
figure of merit while keeping the device at the lead-  
ing edge for what concerns swithing speed, gate  
charge and ruggedness.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVES  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
500  
GS  
V
Drain-gate Voltage (R = 20 k)  
500  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
±30  
V
I
Drain Current (continuos) at T = 25°C  
8
A
D
C
I
Drain Current (continuos) at T = 100°C  
5.4  
A
D
C
I
()  
Drain Current (pulsed)  
32  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
135  
W
C
Derating Factor  
1
3
W/°C  
V/ns  
°C  
°C  
dv/dt(1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
(1)I 8A, di/dt 300A/µs, V V  
, T T  
(BR)DSS j JMAX.  
SD  
DD  
November 2001  
1/9  

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