5秒后页面跳转
STB8NA50 PDF预览

STB8NA50

更新时间: 2024-09-14 22:24:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 131K
描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STB8NA50 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliant风险等级:5.36
雪崩能效等级(Eas):350 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):8 A
最大漏源导通电阻:0.85 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):32 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB8NA50 数据手册

 浏览型号STB8NA50的Datasheet PDF文件第2页浏览型号STB8NA50的Datasheet PDF文件第3页浏览型号STB8NA50的Datasheet PDF文件第4页浏览型号STB8NA50的Datasheet PDF文件第5页浏览型号STB8NA50的Datasheet PDF文件第6页浏览型号STB8NA50的Datasheet PDF文件第7页 
STB8NA50  
N - CHANNEL ENHANCEMENT MODE  
FAST POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on )  
< 0.85 Ω  
ID  
STB8NA50  
500 V  
8 A  
n
n
n
n
n
n
n
n
TYPICAL RDS(on) = 0.7 Ω  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
REDUCED THRESHOLD VOLTAGE SPREAD  
THROUGH-HOLE I2PAK (TO-262) POWER  
PACKAGE IN TUBE (SUFFIX ”-1”)  
SURFACE-MOUNTING D2PACK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX)  
OR IN TAPE & REEL (SUFFIX ”T4”)  
1
1
I2PAK  
TO-262  
D2PAK  
TO-263  
n
APPLICATIONS  
n
n
n
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
500  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
V
VDGR  
VGS  
ID  
500  
± 30  
8
V
A
ID  
5.3  
A
I
DM()  
32  
A
Ptot  
Total Dissipation at Tc = 25 oC  
125  
W
Derating Factor  
1
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
October 1995  

STB8NA50 替代型号

型号 品牌 替代类型 描述 数据表
IRF840ASPBF VISHAY

功能相似

Power MOSFET

与STB8NA50相关器件

型号 品牌 获取价格 描述 数据表
STB8NA50-1 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-262VAR
STB8NC50 STMICROELECTRONICS

获取价格

N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh⑩
STB8NC50-1 STMICROELECTRONICS

获取价格

N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/
STB8NC50T4 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB
STB8NC70Z STMICROELECTRONICS

获取价格

N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2P
STB8NC70Z-1 STMICROELECTRONICS

获取价格

N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2P
STB8NC70ZT4 STMICROELECTRONICS

获取价格

N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOS
STB8NM60 STMICROELECTRONICS

获取价格

N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET
STB8NM60D STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 0.9ヘ - 8A - TO-220/D2PAK Fas
STB8NM60N STMICROELECTRONICS

获取价格

N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power