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STB8NC70Z

更新时间: 2024-11-04 22:24:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
13页 534K
描述
N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET

STB8NC70Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliant风险等级:5.74
Is Samacsys:N雪崩能效等级(Eas):354 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:700 V
最大漏极电流 (Abs) (ID):6.8 A最大漏极电流 (ID):6.8 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):135 W
最大脉冲漏极电流 (IDM):27 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB8NC70Z 数据手册

 浏览型号STB8NC70Z的Datasheet PDF文件第2页浏览型号STB8NC70Z的Datasheet PDF文件第3页浏览型号STB8NC70Z的Datasheet PDF文件第4页浏览型号STB8NC70Z的Datasheet PDF文件第5页浏览型号STB8NC70Z的Datasheet PDF文件第6页浏览型号STB8NC70Z的Datasheet PDF文件第7页 
STP8NC70Z - STP8NC70ZFP  
STB8NC70Z - STB8NC70Z-1  
N-CHANNEL 700V - 0.90- 6.8A TO-220/FP/D2PAK/I2PAK  
Zener-Protected PowerMESH™III MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STP8NC70Z/FP  
STB8NC70Z/-1  
700V  
700V  
< 1.2 Ω  
< 1.2 Ω  
6.8 A  
6.8 A  
3
1
TYPICAL R (on) = 0.9 Ω  
DS  
2
3
D PAK  
2
EXTREMELY HIGH dv/dt AND CAPABILITY  
GATE-TO- SOURCE ZENER DIODES  
100% AVALANCHE TESTED  
VERY LOW GATE INPUT RESISTANCE  
GATE CHARGE MINIMIZED  
1
TO-220  
TO-220FP  
3
2
1
2
DESCRIPTION  
I PAK  
The third generation of MESH OVERLAY™ Power  
MOSFETs for very high voltage exhibits unsurpassed  
on-resistance per unit area while integrating back-to-  
back Zener diodes between gate and source. Such ar-  
rangement gives extra ESD capability with higher rug-  
gedness performance as requested by a large variety  
of single-switch applications.  
APPLICATIONS  
SINGLE-ENDED SMPS IN MONITORS,  
COMPUTER AND INDUSTRIAL APPLICATION  
WELDING EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP(B)8NC70Z(-1) STP8NC70ZFP  
V
Drain-source Voltage (V = 0)  
700  
700  
± 25  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
Gate- source Voltage  
V
GS  
I
Drain Current (continuous) at T = 25°C  
6.8  
4.3  
6.8(*)  
4.3(*)  
27(*)  
40  
A
D
C
I
Drain Current (continuous) at T = 100°C  
A
D
C
I
( )  
Drain Current (pulsed)  
27  
A
DM  
P
Total Dissipation at T = 25°C  
135  
1.08  
W
TOT  
C
Derating Factor  
0.32  
W/°C  
mA  
KV  
V/ns  
V
I
Gate-source Current (DC)  
±50  
3
GS  
V
Gate source ESD(HBM-C=100pF, R=15KΩ)  
Peak Diode Recovery voltage slope  
Insulation Winthstand Voltage (DC)  
Storage Temperature  
ESD(G-S)  
dv/dt(1)  
3
V
--  
2000  
ISO  
T
stg  
–65 to 150  
150  
°C  
°C  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
December 2002  
(1)I 6.8A, di/dt 100A/µs, V V  
, T T  
j JMAX  
SD  
DD  
(BR)DSS  
(*)Pulse width Limited by maximum temperature allowed  
1/13  
.

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