是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.74 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 354 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 700 V |
最大漏极电流 (Abs) (ID): | 6.8 A | 最大漏极电流 (ID): | 6.8 A |
最大漏源导通电阻: | 1.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 135 W |
最大脉冲漏极电流 (IDM): | 27 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB8NC70Z-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2P | |
STB8NC70ZT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOS | |
STB8NM60 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET | |
STB8NM60D | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 600V - 0.9ヘ - 8A - TO-220/D2PAK Fas | |
STB8NM60N | STMICROELECTRONICS |
获取价格 |
N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power | |
STB8NM60T4 | STMICROELECTRONICS |
获取价格 |
N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Pow | |
STB8NS25 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 250V - 0.38ohm - 8A D2PAK MESH OVER | |
STB8NS25T4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB | |
STB90N55F4 | STMICROELECTRONICS |
获取价格 |
90A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK- | |
STB90NF03 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 0.0065 ohm - 95A DPAK STripF |