Datasheet > STB85NF55T4

STB85NF55T4

更新时间： 2024-09-12 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
10页	155K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 80A I(D) \| TO-263AB

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数据手册

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STB85NF55T4 数据手册

STB85NF55

STP85NF55

N-CHANNEL 55V - 0.0062 Ω - 80A D PAK/TO-220

STripFET II POWER MOSFET

TYPE

DSS

DS(on)

STB85NF55

STP85NF55

55 V

<0.008 Ω

80 A

■

TYPICAL R (on) = 0.0062 Ω

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

D PAK

TO-263

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique ”Single Feature Size

(Suffix “T4”)

TO-220

”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC CONVERTERS

AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 20

(• )

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

(••)

Drain Current (pulsed)

320

300

2.0

Total Dissipation at T = 25°C

tot

Derating Factor

W/°C

V/ns

(1)

(2)

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

dv/dt

980

stg

-55 to 175

°C

Max. Operating Junction Temperature

(1)

(2)

≤80A, di/dt ≤300A/µs, V

≤ V

, T ≤ T

(BR)DSS JMAX

(•)Current Limited by Package

(••) Pulse width limited by safe operating area

Starting T = 25

= 40A

= 25V

March 2002

1/10

12 3 4 5 6 7...10

中文翻译

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