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SI4909DY-T1-GE3 PDF预览

SI4909DY-T1-GE3

更新时间: 2024-09-18 12:19:11
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
10页 273K
描述
Dual P-Channel 40 V (D-S) MOSFET

SI4909DY-T1-GE3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.13
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:321228Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:SOIC (NARROW): 8-LEADSamacsys Released Date:2016-05-17 16:02:04
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):8 A最大漏源导通电阻:0.027 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):3.2 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4909DY-T1-GE3 数据手册

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New Product  
Si4909DY  
Vishay Siliconix  
Dual P-Channel 40 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
ID (A)d  
- 8  
VDS (V)  
RDS(on) ()  
Qg (Typ.)  
Definition  
TrenchFET® Power MOSFET  
100 % Rg Tested  
0.027 at VGS = - 10 V  
0.034 at VGS = - 4.5 V  
- 40  
21.7 nC  
- 7.2  
100 % UIS Tested  
Compliant to RoHS Directive 2002/95/EC  
S
1
S
2
APPLICATIONS  
SO-8  
Load Switches  
- Notebook PCs  
- Desktop PCs  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View  
Ordering Information: Si4909DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
D
D
2
1
P-Channel MOSFET P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
- 40  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
TC = 25 °C  
C = 70 °C  
- 8.0  
T
- 6.5  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 6.4a, b  
- 5.1a, b  
TA = 25 °C  
TA = 70 °C  
A
- 30e  
IDM  
IS  
Pulsed Drain Current  
- 2.6  
TC = 25 °C  
TA = 25 °C  
Continuous Source-Drain Diode Current  
- 1.6a, b  
- 20  
IAS  
Avalanche Current  
L = 0.1 mH  
EAS  
Single-Pulse Avalanche Energy  
20  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
3.2  
2.1  
PD  
Maximum Power Dissipation  
2.0a, b  
1.28a, b  
- 55 to 150  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta, c  
Symbol  
Typical  
47  
Maximum  
Unit  
RthJA  
RthJF  
t 10 s  
Steady State  
62.5  
38  
°C/W  
Maximum Junction-to-Foot  
29  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. Maximum under steady state conditions is 110 °C/W.  
d. Based on TC = 25 °C.  
e. Limited by package.  
Document Number: 67077  
S10-2603-Rev. A, 15-Nov-10  
www.vishay.com  
1

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