SI4914BDY

更新时间： 2024-09-16 09:26:03

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
15页	276K
描述
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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SI4914BDY 数据手册

Si4914BDY

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

8.4

0.021 at V_GS= 10 V

0.027 at V_GS= 4.5 V

0.020 at V_GS= 10 V

0.025 at V_GS= 4.5 V

•

LITTLE FOOT^®Plus Integrated Schottky

Channel-1

Channel-2

6.7

7.4

100 % R_gand UIS Tested

8^d

•

Compliant to RoHS Directive 2002/95/EC

7.0

APPLICATIONS

•

Notebook PC

- System Power dc-to-dc

SCHOTTKY PRODUCT SUMMARY

V_SD(V)

V_DS(V)

I_F(A)

Diode Forward Voltage

0.50 V at 1.0 A

2.0

SO-8

N-Channel 1

MOSFET

S /D

Schottky Diode

Top View

Ordering Information:Si4914BDY-T1-E3 (Lead (Pb)-free)

Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel 2

MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Channel-1

Channel-2

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

8^d

T_C= 25 °C

8.4

6.7

_C= 70 °C

_A= 25 °C

7.4

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

6.7^{b, c}

7.4^{b, c}

5.3^{b, c}

5.7^{b, c}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

_C= 25 °C

2.4

2.8

1.0^{b, c}

1.1^{b, c}

T_A= 25 °C

I_SM

I_AS

PulseD Source-Drain Current

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

E_AS

11.2

2.7

1.7

3.1

2.0

_C= 70 °C

_A= 25 °C

Maximum Power Dissipation^{a, b}

P_D

1.7^{b, c}

1.1^{b, c}

2.0^{b, c}

1.2^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Package limited.

Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

www.vishay.com

12 3 4 5 6 7...15

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