是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 5.5 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 2 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4922BDY-T1-E3 | VISHAY |
获取价格 |
Dual N-Channel 30-V (D-S) MOSFET | |
SI4922BDY-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-o | |
SI4922DY | VISHAY |
获取价格 |
SPICE Device Model Si4922DY | |
SI4922DY-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI4923DY | VISHAY |
获取价格 |
Dual P-Channel 30-V (D-S) MOSFET | |
SI4923DY-T1 | VISHAY |
获取价格 |
Transistor | |
SI4923DY-T1-GE3 | VISHAY |
获取价格 |
DUAL P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel | |
SI4924DY | VISHAY |
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Asymetrical Dual N-Channel 30-V (D-S) MOSFET | |
SI4924DY-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI4924DY-T1 | VISHAY |
获取价格 |
Asymetrical Dual N-Channel 30-V (D-S) MOSFET |