Datasheet > SI4925BDY-T1

SI4925BDY-T1

更新时间： 2024-09-15 22:08:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	66K
描述
Dual P-Channel 30-V (D-S) MOSFET

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SI4925BDY-T1 数据手册

Si4925BDY

Vishay Siliconix

Dual P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

D Advanced High Cell Density Process

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.025 @ V = -10 V

-7.1

-5.5

-30

D Load Switches

- Notebook PCs

- Desktop PCs

- Game Stations

0.041 @ V = -4.5

SO-8

Top View

Ordering Information: Si4925BDY

Si4925BDY-T1 (with Tape and Reel)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-30

"20

= 25_C

= 70_C

-5.3

-4.3

-7.1

-5.7

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

-40

continuous Source Current (Diode Conduction)

-1.7

2.0

-0.9

1.1

= 25_C

= 70_C

Maximum Power Dissipation

1.3

0.7

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1 ” x 1” FR4 Board.

Document Number: 72001

S-31989—Rev. B, 13-Oct-03

www.vishay.com

12 3 4 5

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