Datasheet > Si4932DY

Si4932DY

更新时间： 2024-11-10 14:53:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	189K
描述
Dual N-Channel 30-V (D-S) MOSFET

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Si4932DY 数据手册

Si4932DY

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

TrenchFET^®Power MOSFET

_D(A)^{a, e}

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

•

• 100 % R_gTested

• 100 % UIS Tested

0.015 at V_GS= 10 V

0.017 at V_GS= 4.5 V

14.7

APPLICATIONS

•

DC/DC Conversion

•

Load Switching

SO-8

Top View

Ordering Information: Si4932DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

Unit

V_GS

8^e

_C= 25 °C

8^e

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

8^{b, c, e}

6.8^{b, c}

2.6

1.7^{b, c}

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Source-Drain Current Diode Current

T_C= 25 °C

_A= 25 °C

I_SM

I_AS

Pulsed Source-Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

E_AS

3.2

2.1

2^{b, c}

1.28^{b, c}

P_D

Maximum Power Dissipation

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

62.5

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

t ≤ 10 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W.

e. Package limited.

Document Number: 69012

S-83042-Rev. A, 22-Dec-08

www.vishay.com

12 3 4 5 6 7...9

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