SI4936DY_NL

更新时间： 2024-11-09 13:13:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	240K
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SI4936DY_NL 数据手册

June 1999

Si4936DY*

Dual N-Channel Enhancement Mode MOSFET

General Description

Features

These N-Channel Enhancement Mode MOSFETs are

produced using Fairchild Semiconductor's advance

process that has been especially tailored to minimize

on-state resistance and yet maintain superior switching

performance.

5.8 A, 30 V. R_DS(ON)= 0.037 Ω @ V_GS= 10 V

R_DS(ON)= 0.055 Ω @ V_GS= 4.5 V

Low gate charge.

Fast switching speed.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

High power and current handling capability.

Applications

Battery switch

Load switch

Motor controls

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1999 Fairchild Semiconductor Corporation

Si4936DY Rev. A

12 3

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