Datasheet > SI4946BEY_09

SI4946BEY_09

更新时间： 2024-11-06 09:26:03

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威世 - VISHAY		/
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描述
Dual N-Channel 60-V (D-S) 175 °C MOSFET

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SI4946BEY_09 数据手册

Si4946BEY

Vishay Siliconix

Dual N-Channel 60-V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)(Ω)

I_D(A)

6.5

Q_g(Typ.)

0.041 at V_GS= 10 V

0.052 at V_GS= 4.5 V

•

TrenchFET^®Power MOSFET

175 °C Maximum Junction Temperature

100 % R_gTested

9.2 nC

5.8

Compliant to RoHS directive 2002/95/EC

SO-8

Top View

Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free)

Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

6.5

5.5

_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 150 °C)

I_D

5.3^{a, b}

4.4^{a, b}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

3.1

Continuous Source Drain Diode Current

2^{a, b}

T_A= 25 °C

I_AS

Avalanche Current

L = 0 1 mH

T_C= 25 °C

E_AS

Single-Pulse Avalanche Energy

7.2

3.7

2.6

_C= 70 °C

_A= 25 °C

P_D

Maximum Power Dissipation

2.4^{a, b}

1.7^{a, b}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

Typical

Maximum

62.5

Unit

R_thJA

t ≤ 10 s

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

d. Maximum under Steady State conditions is 110 °C/W.

Document Number: 73411

S09-2434-Rev. C, 16-Nov-09

www.vishay.com

12 3 4 5 6 7...10

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