生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.81 | Is Samacsys: | N |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 4.5 A | 最大漏源导通电阻: | 0.055 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4952DY-T1-E3 | VISHAY |
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Power Field-Effect Transistor, 8A I(D), 25V, 0.023ohm, 2-Element, N-Channel, Silicon, Meta | |
SI4953ADY | VISHAY |
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Dual P-Channel 30-V (D-S) MOSFET | |
SI4953ADY (KI4953ADY) | KEXIN |
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Dual P-Channel MOSFET | |
SI4953ADY_06 | VISHAY |
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Dual P-Channel 30-V (D-S) MOSFET | |
SI4953ADY-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, P-Channel, Silicon, Metal | |
SI4953ADY-T1 | VISHAY |
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Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, P-Channel, Silicon, Metal | |
SI4953ADY-T1-GE3 | VISHAY |
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TRANSISTOR 3700 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND | |
SI4953DY | FAIRCHILD |
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Dual P-Channel Enhancement Mode MOSFET | |
SI4953DY | VISHAY |
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Dual P-Channel 30-V(D-S) MOSFET | |
SI4953DY (KI4953DY) | KEXIN |
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Dual N-Channel MOSFET |